BU920PFI データシートの表示（PDF） - Inchange Semiconductor
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BU920PFI Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BU920PFI
DESCRIPTION
·High Voltage
·DARLINGTON
APPLICATIONS
·Designed for automotive ignition applications and inverter
circuits for motor control.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage VBE= 0
400
V
VCEO Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
10
A
ICM
Collector Current-peak
15
A
IBB
Base Current
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
5
A
55
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 2.27 ℃/W
isc Website：www.iscsemi.cn
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