BUJ103A データシートの表示（PDF） - Philips Electronics

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BUJ103A

Silicon Diffused Power Transistor

Philips Electronics 

Philips Semiconductors

Silicon Diffused Power Transistor

Product specification

BUJ103A

+ 50v

100-200R

Horizontal

Oscilloscope

Vertical

300R

1R

6V

30-60 Hz

Fig.1. Test circuit for VCEOsust.

IC / mA

90 %

ICon

90 %

IC

ton

IB

10 %

tr 30ns

10 %

ts

tf

toff

IBon

-IBoff

Fig.4. Switching times waveforms with resistive load.

VCC

250

200

100

0

Fig.2.

VCE / V

min

VCEOsust

Oscilloscope display for VCEOsust.

VCC

VIM

RB

0

tp

T

RL

T.U.T.

Fig.3. Test circuit resistive load. VIM = -6 to +8 V

VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.

RB and RL calculated from ICon and IBon requirements.

IBon

-VBB

LC

LB

T.U.T.

Fig.5. Test circuit inductive load.

VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH

ICon

90 %

IC

10 %

ts

tf

t

toff

IB

IBon

t

-IBoff

Fig.6. Switching times waveforms with inductive load.

August 1998

3

Rev 1.000

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