BUK7510-55AL データシートの表示（PDF） - Philips Electronics
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BUK7510-55AL Datasheet PDF : 14 Pages
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Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9 and 10
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A; Figure 6 and 8
Tj = 25 °C
Tj = 175 °C
Qg(tot)
Qgs
Qgd
Vplat
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
total gate charge
gate-source charge
gate-drain (Miller) charge
plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
ID = 25 A; VDD = 44 V; VGS = 10 V;
Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 12
VDS = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
from drain lead 6 mm from package to
center of die
from contact screw on mounting base to
center of die
from upper edge of drain mounting base
to center of die SOT404
Ls
internal source inductance
Source-drain diode
from source lead to source bond pad
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 15
trr
reverse recovery time
Qr
recovered charge
IS = 20 A; dIS/dt = −100 A/µs;
VGS = 0 V; VR = 30 V
Min Typ Max Unit
55 -
-
V
50 -
-
V
2
3
4
V
1
-
-
V
-
-
4.4 V
-
0.05 10 µA
-
-
500 µA
-
2
100 nA
-
8.5 10 mΩ
-
-
20 mΩ
-
124 -
nC
-
22 -
nC
-
50 -
nC
-
5
-
V
-
4710 6280 pF
-
980 1180 pF
-
560 770 pF
-
33 -
ns
-
117 -
ns
-
132 -
ns
-
95 -
ns
-
4.5 -
nH
-
3.5 -
nH
-
2.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
73 -
ns
-
430 -
nC
9397 750 14362
Product data sheet
Rev. 01 — 31 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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