BUJ303A データシートの表示（PDF） - NXP Semiconductors.

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BUJ303A

NPN power transistor

NXP Semiconductors. 

BUJ303A

NPN power transistor

Rev. 6 — 8 February 2012

Product data sheet

1. Product profile

1.1 General description

High voltage, high speed planar passivated NPN power switching transistor in a SOT78

(TO-220AB) plastic package.

1.2 Features and benefits

 Fast switching

 Low thermal resistance

 Very high voltage capability

 Very low switching and conduction

losses

1.3 Applications

 DC-to-DC converters

 High frequency electronic lighting

ballasts

 Inverters

 Motor control systems

1.4 Quick reference data

Table 1. Quick reference data

Symbol

Parameter

IC

Ptot

VCESM

collector current

total power dissipation

collector-emitter peak

voltage

Static characteristics

hFE

DC current gain

Conditions

see Figure 1; see Figure 2; see Figure 4

Tmb ≤ 25 °C; see Figure 3

VBE = 0 V

IC = 5 mA; VCE = 5 V; Tmb = 25 °C;

see Figure 11

IC = 500 mA; VCE = 5 V; Tmb = 25 °C;

see Figure 11

Min Typ Max Unit

-

-

5

A

-

-

100 W

-

-

1000 V

10 22 35

14 25 35

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