BUL44 データシートの表示（PDF） - Motorola => Freescale

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BUL44

SWITCHMODE NPN Bipolar Power Transistor

Motorola => Freescale 

BUL44 BUL44F

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Base–Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc)

(IC = 1.0 Adc, IB = 0.2 Adc)

VBE(sat)

—

0.85

1.1

Vdc

—

0.92

1.25

Collector–Emitter Saturation Voltage

(IC = 0.4 Adc, IB = 40 mAdc)

(IC = 1.0 Adc, IB = 0.2 Adc)

VCE(sat)

Vdc

—

0.20

0.5

(TC = 125°C)

—

0.20

0.5

—

0.25

0.6

(TC = 125°C)

—

0.25

0.6

DC Current Gain

(IC = 0.2 Adc, VCE = 5.0 Vdc)

(IC = 0.4 Adc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 5.0 Vdc)

hFE

(TC = 125°C)

(TC = 125°C)

(TC = 125°C)

—

14

—

34

—

32

—

12

20

—

12

20

—

8.0

14

—

7.0

13

—

10

22

—

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

—

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

COB

—

Input Capacitance (VEB = 8.0 V)

CIB

—

(IC = 0.4 Adc

1.0 µs (TC = 125°C)

—

—

Dynamic Saturation Voltage:

Determined 1.0 µs and

3.0 µs respectively after

rising IB1 reaches 90% of

final IB1

IB1 = 40 mAdc

VCC = 300 V)

(IC = 1.0 Adc

IB1 = 0.2 Adc

VCC = 300 V)

3.0 µs (TC = 125°C)

1.0 µs (TC = 125°C)

3.0 µs (TC = 125°C)

VCE(dsat)

—

—

—

—

—

—

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)

13

—

MHz

38

60

pF

380

600

pF

2.5

—

2.7

—

1.3

—

1.15

—

Vdc

3.2

—

7.5

—

1.25

—

1.6

—

Turn–On Time

(IC = 0.4 Adc, IB1 = 40 mAdc

ton

IB2 = 0.2 Adc, VCC = 300 V)

(TC = 125°C)

—

40

100

ns

—

40

—

Turn–Off Time

(IC = 0.4 Adc, IB1 = 40 mAdc

toff

IB2 = 0.2 Adc, VCC = 300 V)

(TC = 125°C)

—

1.5

2.5

µs

—

2.0

—

Turn–On Time

(IC = 1.0 Adc, IB1 = 0.2 Adc

ton

IB1 = 0.5 Adc, VCC = 300 V)

(TC = 125°C)

—

85

150

ns

—

85

—

Turn–Off Time

(IC = 1.0 Adc, IB1 = 0.2 Adc

toff

IB2 = 0.5 Adc, VCC = 300 V)

(TC = 125°C)

—

1.75

2.5

µs

—

2.10

—

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)

Fall Time

(IC = 0.4 Adc, IB1 = 40 mAdc

tfi

IB2 = 0.2 Adc)

(TC = 125°C)

—

125

200

ns

—

120

—

Storage Time

tsi

(TC = 125°C)

—

0.7

1.25

µs

—

0.8

—

Crossover Time

tc

(TC = 125°C)

—

110

200

ns

—

110

—

Fall Time

(IC = 1.0 Adc, IB1 = 0.2 Adc

tfi

IB2 = 0.5 Adc)

(TC = 125°C)

—

110

175

ns

—

120

—

Storage Time

tsi

(TC = 125°C)

—

1.7

2.75

µs

—

2.25

—

Crossover Time

tc

(TC = 125°C)

—

180

300

ns

—

210

—

Fall Time

(IC = 0.8 Adc, IB1 = 160 mAdc

tfi

IB2 = 160 mAdc)

(TC = 125°C)

70

—

170

ns

—

180

—

Storage Time

tsi

(TC = 125°C)

2.6

—

3.8

µs

—

4.2

—

Crossover Time

tc

(TC = 125°C)

—

190

300

ns

—

350

—

2

Motorola Bipolar Power Transistor Device Data

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