BUV24 データシートの表示（PDF） - Inchange Semiconductor
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BUV24 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV24
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; L= 25mH
400
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB=B 1.2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A ;IB= 2.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 12A ;IB= 2.4A
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 320V; IB= 0
VCE= VCEX;VBE= -1.5V
VCE= VCEX;VBE= -1.5V;TC=125℃
VEB= 5V; IC= 0
0.6
V
1.0
V
1.15 V
3.0 mA
3.0
12
mA
1.0 mA
hFE-1
DC Current Gain
IC= 6A ; VCE= 4V
15
60
hFE-2
DC Current Gain
IC= 12A ; VCE= 4V
8
fT
Current-Gain—Bandwidth Product IC= 2A;VCE= 15V, ftest= 10MHz
8
Switching Times
MHz
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 12A ;IB1=-IB2= 2.4A
1.6 μs
3.0 μs
1.4 μs
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