C67078-A1401-A2 データシートの表示（PDF） - Siemens AG
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C67078-A1401-A2 Datasheet PDF : 6 Pages
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BUZ 205
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Static characteristics
Drain-source breakdown voltage
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage
VGS = VDS , ID = 1 mA
Zero gate voltage drain current
VDS = 400 V, VGS = 0 V
Tj = 25 ˚C
Tj = 125 ˚C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-source on-resistance
VGS = 10 V, ID = 4.0 A
V(BR) DSS 400
VGS (th)
2.1
IDSS
–
–
IGSS
–
RDS (on)
–
Dynamic characteristics
Forward transconductance
VDS ≥ 2 x ID x RDS(on)max , ID = 4.0 A
gfs
1.7
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss
–
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss
–
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
–
Turn-on time ton , (ton = td (on) + tr)
td (on)
–
VDD = – 30 V, VGS = 10 V, ID = 2.7 A, RGS = 50 Ω tr
–
Turn-off time toff , (toff = td (off) + tf)
td (off)
–
VDD = – 30 V, VGS = 10 V, ID = 2.7 A, RGS = 50 Ω tf
–
Values
Unit
typ.
max.
–
–
V
4.0
4.0
µA
20
250
100
1000
10
100
nA
0.9
1.0
Ω
2.9
–
S
1500 2000 pF
120
180
35
60
30
45
ns
40
60
110
140
50
65
Semiconductor Group
509
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