BUZ 205
Characteristics at Tj = 25 ˚C, unless otherwise specified.
Total power dissipation
Typ. output characteristics
Ptot = f (TC)
ID = f (VDS)
parameter: tp = 80 µs
Safe operating area
ID = f (VDS)
parameter: D = 0.01, TC = 25 ˚C
Typ. transfer characteristics
ID = f (VGS)
parameter: tp = 80 µs, VDS = 25 V
Semiconductor Group
511