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コンポーネント説明
BUZ31 データシートの表示(PDF) - Siemens AG
部品番号
コンポーネント説明
メーカー
BUZ31
SIPMOS® Power Transistor
Siemens AG
BUZ31 Datasheet PDF : 9 Pages
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9
BUZ 31
Typ. output characteristics
I
D
=
ƒ(
V
DS
)
parameter:
t
p
= 80 µs
32
P
tot
= 95W
l
kj
i h
g
A
I
D
24
20
16
12
8
V
GS
[V]
f
a 4.0
b 4.5
c 5.0
e
d 5.5
e 6.0
f 6.5
g 7.0
d
h 7.5
i 8.0
j 9.0
c
k 10.0
l 20.0
b
4
a
0
0
2
4
6
8
10 V 13
V
DS
Typ. transfer characteristics
I
D
=
f
(
V
GS
)
parameter:
t
p
= 80 µs
V
DS
≥
2 x
I
D
x
R
DS(on)max
16
A
I
D
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 V 10
V
GS
Typ. drain-source on-resistance
R
DS (on)
=
ƒ(
I
D
)
parameter:
V
GS
0.65
Ω
a
0.55
R
DS (on)
0.50
b
c
d
e
0.45
0.40
0.35
0.30
0.25
0.20
0.15
f
g
h
ji
k
0.10
V
GS
[V] =
0.05
abc def
4.05 5.0 5.5 6.0 6.5 7.0
0.00
ghi j k
7.5 8.0 9.0 10.0 20.0
0
4
8 12 16 20 A 28
I
D
Typ. forward transconductance
g
fs
=
f
(
I
D
)
parameter:
t
p
= 80 µs,
V
DS
≥
2 x
I
D
x R
DS(on)max
13
S
11
g
fs
10
9
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 A 16
I
D
Semiconductor Group
6
07/96
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