BUZ 334
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 12 A, VDD = 50 V
RGS = 25 Ω, L = 11.8 mH
1000
mJ
EAS 800
700
600
500
400
300
200
100
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 18 A
16
V
VGS
12
10
0,2
V
DS
max
0,8
V
DS
max
8
6
4
2
0
0 40 80 120 160 200 240 280 nC 340
QGate
710
V
680
V(BR)DSS
660
640
620
600
580
560
540
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
07/96