C67078-S3118-A2 データシートの表示（PDF） - Infineon Technologies
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C67078-S3118-A2 Datasheet PDF : 9 Pages
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BUZ 325
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
28
A
Ptot = 125W l kj i h
g
24
ID
22
20
18
16
14
12
10
8
6
4
2
0
0
4
8
12
fVGS [V]
a 4.0
b 4.5
c 5.0
e d 5.5
e 6.0
f 6.5
g 7.0
d
h 7.5
i 8.0
j 9.0
c k 10.0
l 20.0
b
a
16 V 22
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
22
A
18
\SYMBOL.ID\
16
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
1.1
a
Ω
b
c
d
e
RDS (on) 0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
VGS [V] =
0.1 a b c d e f
4.05 5.0 5.5 6.0 6.5 7.0
0.0
0
4
8
12
f
g
h
i
j
k
ghi j k
7.5 8.0 9.0 10.0 20.0
16 20 A 26
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
15
S
13
gfs
12
11
10
9
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 A 20
ID
Semiconductor Group
6
07/96
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