BY396P(2013) データシートの表示（PDF） - Vishay Semiconductors
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BY396P Datasheet PDF : 4 Pages
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Not Available for New Designs, Use RGP30B, RGP30D, RGP30G, RGP30K
www.vishay.com
BY396P, BY397P, BY398P, BY399P
Vishay General Semiconductor
Soft Recovery Fast Switching Plastic Rectifier
DO-201AD
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
IR
VF
TJ max.
Package
3.0 A
100 V, 200 V, 400 V, 800 V
100 A
500 ns
10 μA
1.25 V
125 °C
DO-201AD
Diode variation
Single die
FEATURES
• Fast switching for high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
Note
• These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case: DO-201AD, molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead lengths at TA = 50 °C
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load at TA= 50 °C
Maximum repetitive peak forward surge at f < 15 kHz
Operating junction temperature range
Storage temperature range
VRRM
VRMS
VDC
IF(AV)
IFSM
IFRM
TJ
TSTG
BY396P
100
70
100
BY397P
200
140
200
BY398P
400
280
400
3.0
100
10
- 50 to + 125
- 50 to + 150
BY399P
800
560
800
UNIT
V
V
V
A
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL BY396P BY397P BY398P
Maximum instantaneous
forward voltage
3.0 A
VF
1.25
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
TA = 100 °C
IR
10
500
Maximum reverse recovery time
IF = 10 mA, IR = 10 mA, Irr
= 1.0 mA
trr
500
Maximum forward recovery time
100 mA, dI/dt = 50 A/μs
tfr
1.0
Typical junction capacitance
4.0 V, 1 MHz
CJ
28
BY399P
UNIT
V
μA
ns
μs
pF
Revision: 24-Jul-13
1
Document Number: 88542
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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