BYD52G データシートの表示（PDF） - Philips Electronics
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BYD52G Datasheet PDF : 8 Pages
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Philips Semiconductors
Fast soft-recovery controlled
avalanche rectifiers
Preliminary specification
BYD52 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass SOD120
package through Implotec™(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
handbokok, halfpage
a
MGL571
Fig.1 Simplified outline (SOD120) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VRRM
VR
IF(AV)
IFSM
Tstg
Tj
repetitive peak reverse voltage
BYD52D
BYD52G
BYD52J
continuous reverse voltage
BYD52D
BYD52G
BYD52J
average forward current
non-repetitive peak forward current
storage temperature
junction temperature
Tamb = 25 °C; printed-circuit board
mounting, pitch 5 mm, see Fig.6;
averaged over any 20 ms period;
see Fig.2
t = 10 ms half sine wave;
Tj = 25 °C; VR = VRRMmax
see fig.3
MIN.
−
−
−
−
−
−
−
−
−65
−65
MAX. UNIT
200 V
400 V
600 V
200 V
400 V
600 V
0.47 A
5A
+175 °C
+175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
trr
reverse recovery time
CONDITIONS
IF = 1 A; see Fig.4
VR = VRRMmax
VR = VRRMmax; Tj = 165 °C; see Fig.5
when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.7
MAX.
3.6
1
100
30
UNIT
V
µA
µA
ns
1998 Dec 03
2
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