BYD57M データシートの表示（PDF） - Philips Electronics

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BYD57M

Ultra-fast soft-recovery controlled avalanche rectifiers

Philips Electronics 

Philips Semiconductors

Ultra-fast soft-recovery

controlled avalanche rectifiers

Product specification

BYD57 series

SYMBOL

PARAMETER

IFRM

repetitive peak forward current

BYD57D to M

BYD57U and V

IFSM

non-repetitive peak forward current

ERSM

Tstg

Tj

non-repetitive peak reverse

avalanche energy

storage temperature

junction temperature

CONDITIONS

Tamb = 60 °C; see Figs 8 and 9

t = 10 ms half sinewave; Tj = 25 °C

prior to surge; VR = VRRMmax

L = 120 mH; Tj = Tj max prior to

surge; inductive load switched off

see Fig.12

MIN.

−

−

−

−

−65

−65

MAX. UNIT

3.0 A

3.7 A

5.0 A

10 mJ

+175 °C

+175 °C

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

VF

V(BR)R

IR

forward voltage

BYD57D to M

BYD57U and V

forward voltage

BYD57D to M

BYD57U and V

reverse avalanche breakdown

voltage

BYD57D

BYD57G

BYD57J

BYD57K

BYD57M

BYD57U

BYD57V

reverse current

trr

reverse recovery time

BYD57D to J

BYD57K and M

BYD57U and V

Cd

diode capacitance

CONDITIONS

IF = 1 A; Tj = Tj max;

see Figs 13 and 14

IF = 1 A;

see Figs 13 and 14

IR = 0.1 mA

MIN.

−

−

−

−

VR = VRRMmax;

see Fig.15

VR = VRRMmax;

Tj = 165 °C; see Fig.15

when switched from

IF = 0.5 A to IR = 1 A;

measured at IR = 0.25 A;

see Fig.18

f = 1 MHz; VR = 0;

see Fig.16

300

500

700

900

1 100

1 300

1 500

−

−

−

−

−

−

TYP.

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

20

MAX. UNIT

2.1 V

1.7 V

3.6 V

2.3 V

−V

−V

−V

−V

−V

−V

−V

5 µA

100 µA

30 ns

75 ns

150 ns

− pF

1999 Nov 11

3

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