BYG85B データシートの表示（PDF） - Philips Electronics
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BYG85B Datasheet PDF : 12 Pages
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Philips Semiconductors
Fast soft-recovery rectifier
Product specification
BYG85B
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
V(BR)R
IR
reverse avalanche
breakdown voltage
reverse current
trr
reverse recovery time
Cd
diode capacitance
-d-d--I--tR--
maximum slope of reverse
recovery current
CONDITIONS
IF = 2 A; Tj = Tj max; see Fig.8
IF = 2 A; see Fig.8
IR = 0.1 mA
VR = VRRMmax; see Fig.9
VR = VRRMmax; Tj = 165 °C;
see Fig.9
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.13
f = 1 MHz; VR = 0; see Fig.10
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = −1 A/µs;
see Fig.12
MIN.
−
−
120
−
−
−
−
−
TYP.
−
−
−
−
−
−
110
−
MAX.
0.78
0.98
−
UNIT
V
V
V
5 µA
150 µA
12.5 ns
− pF
2 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
VALUE
25
100
150
UNIT
K/W
K/W
K/W
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.11.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.11.
For more information please refer to the ‘General Part of associated Handbook’.
1998 Nov 25
3
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