BYG21K-E3(2008) データシートの表示（PDF） - Vishay Semiconductors
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BYG21K-E3 Datasheet PDF : 5 Pages
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BYG21K & BYG21M
Vishay General Semiconductor
100
VR = VRRM
10
1
25
50
75
100
125
150
Junction Temperature (°C)
Figure 3. Reverse Current vs. Junction Temperature
120
VR = VRRM
100
80
PR - Limit
at 100 % VR
60
40
PR - Limit
at 80 % VR
20
0
25
50
75
100
125
150
Junction Temperature (°C)
Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature
25
f = 1 MHz
20
15
10
5
0
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Diode Capacitance vs. Reverse Voltage
200
TA = 125 °C
150
TA = 100 °C
TA = 75 °C
100
TA = 50 °C
TA = 25 °C
50
IR = 0.5 A, iR = 0.125 A
0
0
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Figure 6. Max. Reverse Recovery Charge vs. Forward Current
1000
125 K/W DC
100 tP/T = 0.5
tP/T = 0.2
tP/T = 0.1
10 tP/T = 0.05
tP/T = 0.02
tP/T = 0.01
Single Pulse
1
10-5
10-4
10-3
10-2
10-1
100
101
102
Pulse Length (s)
Figure 7. Thermal Response
Document Number: 88961 For technical questions within your region, please contact one of the following:
Revision: 11-Apr-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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