BYG10J データシートの表示（PDF） - Shenzhen Taychipst Electronic Co., Ltd

部品番号

コンポーネント説明

メーカー

BYG10J

Silicon Mesa SMD Rectifier 200V-1000V 1.5A

Shenzhen Taychipst Electronic Co., Ltd 

Silicon Mesa SMD Rectifier

FEATURES

D Controlled avalanche characteristics

D Glass passivated junction

D Low reverse current

D High surge current capability

D Wave and reflow solderable

BYG10D THRU BYG10M

200V-1000V 1.5A

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Parameter

Reverse voltage

=Repetitive peak reverse voltage

Test Conditions

Peak forward surge current

Average forward current

Junction and storage

temperature range

Pulse energy in avalanche mode,

non repetitive

(inductive load switch off)

tp=10ms,

half sinewave

I(BR)R=1A, Tj=25°C

Maximum Thermal Resistance

Type

Symbol

Value

Unit

BYG10D VR=VRRM

200

V

BYG10G VR=VRRM

400

V

BYG10J VR=VRRM

600

V

BYG10K VR=VRRM

800

V

BYG10M VR=VRRM

1000

V

IFSM

30

A

IFAV

1.5

A

Tj=Tstg –55...+150 °C

ER

20

mJ

Parameter

Junction lead

Junction ambient

Test Conditions

TL=const.

mounted on epoxy–glass hard tissue

mounted on epoxy–glass hard tissue, 50mm2 35mm Cu

mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu

Symbol

RthJL

RthJA

RthJA

RthJA

Value

25

150

125

100

Unit

K/W

K/W

K/W

K/W

Electrical Characteristics

Parameter

Forward voltage

Reverse current

Reverse recovery time

Test Conditions

IF=1A

IF=1.5A

VR=VRRM

VR=VRRM, Tj=100°C

IF=0.5A, IR=1A, iR=0.25A

Type Symbol Min Typ Max Unit

VF

1.1 V

VF

1.15 V

IR

1 mA

IR

10 mA

trr

4 ms

E-mail: sales@taychipst.com

1 of 2

Web Site: www.taychipst.com

Share Link: