BYV116 データシートの表示（PDF） - Philips Electronics
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BYV116 Datasheet PDF : 6 Pages
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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
BYV116, BYV116B series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
SOT78 package, in free air
SOT404 package, pcb mounted, minimum
footprint, FR4 board
MIN.
-
-
-
-
TYP.
-
-
60
50
MAX. UNIT
4 K/W
3.5 K/W
- K/W
- K/W
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
Cd
Junction capacitance
IF = 5 A; Tj = 125˚C
IF = 10 A; Tj = 125˚C
IF = 5 A
VR = VRWM
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
MIN.
-
-
-
-
-
-
TYP.
0.47
0.66
0.58
0.05
5
160
MAX. UNIT
0.54 V
0.77 V
0.64 V
3 mA
10 mA
- pF
March 1998
2
Rev 1.000
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