BZW03C82-TR(2005) データシートの表示（PDF） - Vishay Semiconductors
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BZW03C82-TR Datasheet PDF : 6 Pages
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BZW03-Series
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
• Glass passivated junction
• Hermetically sealed package
e2
• Clamping time in picoseconds
949588
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Voltage regulators and transient suppression circuits
Mechanical Data
Case: SOD-64 Sintered glass case
Weight: approx. 858 mg
Packaging Codes/Options:
TAP / 2.5 k Ammopack (52 mm tape), 12.5 k/box
TR / 2.5 k 10 " reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Power dissipation
Repetitive peak reverse power
dissipation
l = 10 mm, TL = 25 °C
Tamb = 45 °C
Non repetitive peak surge power tp = 100 µs, Tj = 25 °C
dissipation
Junction temperature
Storage temperature range
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction ambient l = 25 mm, TL = constant
on PC board with spacing 37.5 mm
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 1 A
Symbol
Value
Unit
Pdiss
6.0
W
Pdiss
1.85
W
PZRM
20
W
PZSM
1000
W
Tj
175
°C
Tstg
- 65 to + 175
°C
Symbol
Value
Unit
RthJA
30
K/W
RthJA
70
K/W
Symbol
Min
Typ.
Max
Unit
VF
1.2
V
Document Number 85602
Rev. 1.4, 13-Apr-05
www.vishay.com
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