BZX55B8V2 データシートの表示（PDF） - Electronics Industry

部品番号

コンポーネント説明

メーカー

BZX55B8V2

SILICON ZENER DIODES

Electronics Industry 

BZX55B2V0 ~ BZX55B100

VZ : 2.0 - 100 Volts

PD : 500 mW

SILICON ZENER DIODES

DO - 35

0.079(2.0 )max.

1.00 (25.4)

min.

FEATURES :

* Complete 2.0 to 100 Volts

* High surge current capability

0.150 (3.8)

max.

* High peak reverse power dissipation

* High reliability

* Low leakage current

0.020 (0.52)max.

1.00 (25.4)

min.

* Zener Voltage tolerance is ± 2%

* Pb / RoHS Free

MECHANICAL DATA

* Case : Molded glass

Dimensions in inches and ( millimeters )

* Lead : Axial lead solderable per MIL-STD-202,

method 208 guaranteed

* Polarity : Color band denotes cathode end. When operated in zener mode,

cathode will be positive with respect to anode

* Mounting position : Any

* Weight : 0.13 gram (approx.)

MAXIMUM RATINGS

Rating at 25 °C ambient temperature unless otherwise specified

Rating

Power Dissipation (Note1)

Maximum Forward Voltage at IF =100 mA

Maximum Thermal Resistance Junction to Ambient Air (Note1)

Junction Temperature Range

Storage Temperature Range

Symbol

PD

VF

RθJA

Tj

Ts

Value

500

1.0

300

- 65 to + 200

- 65 to + 200

Note : (1) Valid provided that leads at a distance of 3/8” from case are kept at ambient temperature.

Unit

mW

V

°C/W

°C

°C

Page 1 of 2

Rev. 05 : June 25, 2005

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