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BZX79C10(1997) データシートの表示(PDF) - Fairchild Semiconductor

部品番号
コンポーネント説明
メーカー
BZX79C10
(Rev.:1997)
Fairchild
Fairchild Semiconductor Fairchild
BZX79C10 Datasheet PDF : 2 Pages
1 2
Discrete POWER & Signal
Technologies
BZX79C 3V3 - 33 Series Half Watt Zeners
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Parameter
Value
Units
Storage Temperature Range
Maximum Junction Operating Temperature
Lead Temperature (1/16” from case for 10 seconds)
Total Device Dissipation
Derate above 25°C
Surge Power**
-65 to +200
+ 200
+ 230
500
4.0
30
°C
°C
°C
mW
mW /°C
W
*These ratings are limiting values above which the serviceability of the diode may be impaired.
**Non-recurrent square wave PW= 8.3 ms, TA= 50 degrees C.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
Tolerance: C = 5%
DO-35
Electrical Characteristics TA = 25°C unless otherwise noted
Device
VZ*
(V)
MIN MAX
ZZ
()
@
IZT
(mA)
ZZK @ IZT
()
(mA)
BZX79C 3V3 3.1
3.5
95
5.0
600
1.0
BZX79C 3V6 3.4
3.8
90
5.0
600
1.0
BZX79C 3V9 3.7
4.1
90
5.0
600
1.0
BZX79C 4V3 4.0
4.6
90
5.0
600
1.0
BZX79C 4V7 4.4
5.0
80
5.0
500
1.0
BZX79C 5V1 4.8
5.4
60
5.0
480
1.0
BZX79C 5V6 5.2
6.0
40
5.0
400
1.0
BZX79C 6V2 5.8
6.6
10
5.0
150
1.0
BZX79C 6V8 6.4
7.2
15
5.0
80
1.0
BZX79C 7V5 7.0
7.9
15
5.0
80
1.0
BZX79C 8V2 7.7
8.7
15
BZX79C 9V1 8.5
9.6
15
BZX79C 10
9.4
10.6
20
BZX79C 11
10.4
11.6
20
BZX79C 12
11.4
12.7
25
5.0
80
1.0
5.0
100
1.0
5.0
150
1.0
5.0
150
1.0
5.0
150
1.0
BZX79C 13
12.4
14.1
30
BZX79C 15
13.8
15.6
30
BZX79C 16
15.3
17.1
40
BZX79C 18
16.8
19.1
45
BZX79C 20
18.8
21.2
55
5.0
170
1.0
5.0
200
1.0
5.0
200
1.0
5.0
225
1.0
5.0
225
1.0
BZX79C 22
20.8
23.3
55
BZX79C 24
22.8
25.6
70
BZX79C 27
25.1
28.9
80
BZX79C 30
28
32
80
BZX79C 33
31
35
80
5.0
250
1.0
5.0
250
1.0
2.0
300
0.5
2.0
300
0.5
2.0
325
0.5
VF Foward Voltage = 1.5 V Maximum @ IF = 100 mA for all BZX 79 series
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
VR @ IR
(V)
(µA)
1.0
25
1.0
15
1.0
10
1.0
5.0
2.0
3.0
2.0
2.0
2.0
1.0
4.0
3.0
4.0
2.0
5.0
1.0
5.0
0.7
6.0
0.5
7.0
0.2
8.0
0.1
8.0
0.1
8.0
0.10
10.5
0.05
11.2
0.05
12.6
0.05
14
0.05
15.4
0.05
16.8
0.05
18.9
0.05
21
0.05
23.1
0.05
TC
(mV/°C)
MIN
MAX
- 3.5
- 3.5
- 3.5
- 3.5
- 3.5
- 2.7
- 2.0
+ 0.4
+ 1.2
+ 2.5
+ 3.2
+ 3.8
+ 4.5
+ 5.4
+ 6.0
- 7.0
- 9.2
+ 10.4
+ 12.4
+ 14.4
+ 16.4
+ 18.4
+ 21.4
+ 24.4
+ 27.4
0.0
0.0
+ 0.3
+ 1.0
+ 0.2
+ 1.2
+ 2.5
+ 3.7
+ 4.5
+ 5.3
+ 6.2
+ 7.0
+ 8.0
+ 9.0
+ 10
+ 11
+ 13
+ 14
+ 16
+ 18
+ 20
+ 22
+ 25.3
+ 29.4
+ 33.4
ã 1997 Fairchild Semiconductor Corporation

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