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C1210 データシートの表示(PDF) - IMP, Inc
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C1210
Process C1210 CMOS 1.2μm Zero Threshold Devices
IMP, Inc
C1210 Datasheet PDF : 4 Pages
1
2
3
4
Process C1210
Electrical Characteristics
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Field Oxide Thickness
Gate Poly Sheet Resistance
Bottom Poly Sheet Res.
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
Passivation Thickness
Symbol
ρ
N-well(f)
ρ
N+
x
jN+
ρ
P+
x
jP+
T
GOX
T
FIELD
ρ
POLY2
ρ
POLY1
ρ
M1
ρ
M2
T
PASS
Minimum
0.6
20
50
15
Typical
1.0
35
0.35
75
0.35
24
800
22
35
50
30
200+900
Maximum
1.3
50
100
30
Unit
K
Ω
/
Ω
/
µ
m
Ω
/
µ
m
nm
nm
Ω
/
Ω
/
m
Ω
/
m
Ω
/
nm
Comments
n-well
oxide+nit.
Capacitance
Gate Oxide
Metal-1 to Poly-1
Metal-1 to Silicon
Metal-2 to Metal-1
Poly-1 to Poly-2
Symbol
C
OX
C
M1P
C
M1S
C
MM
C
P1P2
Minimum
1.28
Typical
1.38
0.057
0.035
0.69
0.86
Maximum
1.58
1.03
Unit
fF/
µ
m
2
fF/
µ
m
2
fF/
µ
m
2
fF/
µ
m
2
fF/
µ
m
2
Comments
48
C1210-4-98
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