NEZ5964-8D データシートの表示（PDF） - NEC => Renesas Technology

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NEZ5964-8D

4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

NEC => Renesas Technology 

4W/8W C-BAND POWER-GaAs FET NEZ Series

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

CHARACTERISTIC

Drain to Source Voltage

Gate to Source Voltage

Gate to Drain Voltage

Drain Current

Gate Current

Total Power Dissipation

Channel Temperature

Storage Temperature

*TC = 25 ˚C

SYMBOL

VDS

VGS

VGD

ID

IG

PT*

Tch

Tstg

RATINGS

NEZ-4D, 4DD

NEZ-8D, 8DD

15

15

– 12

–12

– 18

– 18

4.5

9.0

25

50

25

50

175

175

– 65 to + 175

– 65 to + 175

UNIT

V

V

V

A

mA

W

˚C

˚C

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

Saturated Drain Current

Pinch-off Voltage

Trans-Conductance

Gate to Drain Voltage

Thermal Resistance

SYMBOL

IDSS

VP

gm

BVGD0

Rth

Part No.

NEZ-4D

NEZ-8D, 8DD

NEZ-4D, 4DD

NEZ-8D, 8DD

NEZ-4D, 4DD

NEZ-8D, 8DD

NEZ-4D, 4DD

NEZ-8D, 8DD

NEZ-4D, 4DD

NEZ-8D, 8DD

MIN.

1.0

2.0

– 3.5

– 3.5

—

—

20

20

—

—

TYP.

2.3

4.5

– 2.0

– 2.0

1300

2600

22

22

5.0

2.5

MAX.

3.5

7.0

– 0.5

– 0.5

—

—

—

—

6.0

3.0

UNIT

A

V

mS

V

˚C/W

TEST CONDITIONS

VDS = 2.5 V, VGS = 0 V

VDS = 2.5 V, IDS = 15 mA

VDS = 2.5 V, IDS = 30 mA

VDS = 2.5 V, IDS = 1 A

VDS = 2.5 V, IDS = 2 A

IGD = 15 mA

IGD = 30 mA

Channel to Case

2

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