NEZ7177-4D データシートの表示（PDF） - NEC => Renesas Technology

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NEZ7177-4D

4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

NEC => Renesas Technology 

4W/8W C-BAND POWER-GaAs FET NEZ Series

8W PERFORMANCE SPECIFICATIONS (TA = 25 ˚C, Z S = ZL = 50 Ω)

P1dB

GL

IDS

GL

IM3

ηadd

TEST CONDITIONS

(dBm)

(dB)

PART NUMBER

*1

(A)

(dB)

(dBc)

(%) VDS IDS FREQUENCY IM3 TEST

*2

*3, 4

*4

(RF OFF) BAND

FREQ.

MIN. TYP. MIN. TYP. TYP. MAX. MAX. TYP. MAX. TYP. (V) (A)

(GHz)

(GHz) *5

NEZ3642-8D, 8DD 38.5 39.5 10.0 11.0 2.4 3.0 1.0 – 45 – 42 40 10 1.6 3.6 to 4.2

4.2

NEZ4450-8D, 8DD 38.5 39.5 9.5 10.5 2.4 3.0 1.0 – 45 – 42 37 10 1.6 4.4 to 5.0

5.0

NEZ5964-8D, 8DD 38.5 39.5 8.5 9.5 2.4 3.0 1.0 – 45 – 42 35 10 1.6 5.9 to 6.45 6.45

NEZ6472-8D, 8DD 38.5 39.5 7.5 8.5 2.4 3.0 1.0 – 45 – 42 32 10 1.6 6.4 to 7.2

7.2

NEZ7177-8D, 8DD 38.5 39.5 7.0 8.0 2.4 3.0 1.0 – 45 – 42 30 10 1.6 7.1 to 7.7

7.7

NEZ7785-8D, 8DD 38.5 39.5 6.5 7.5 2.4 3.0 1.0 – 45 – 42 30 10 1.6 7.7 to 8.5

8.5

Notes *1 Output power at 1dB gain compression point

*2 IDS values are specified at P1dB point.

*3 Gain flatness

*4 Applies to – 8DD option only

*5 IM3 test conditions: f = 10 MHz, 2 tones test, PO = 29dBm (single carrier level)

MAXIMUM OPERATING LIMITS

Rg max.

(Ω)

100

VDS max.

(V)

10

Rg max is the maximum series resistance between the gate supply and the FET gate.

4

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