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CAT25C01LI データシートの表示(PDF) - Catalyst Semiconductor => Onsemi

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CAT25C01LI
Catalyst
Catalyst Semiconductor => Onsemi Catalyst
CAT25C01LI Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
CAT25C01, CAT25C02, CAT25C04
ABSOLUTE MAXIMUM RATINGS*
Storage Temperature
Voltage on Any Pin with Respect to Ground(1)
-65°C to +150°C
-0.5 V to +6.5 V
* Stresses above those listed under Absolute Maximum Ratingsmay cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification
is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
RELIABILITY CHARACTERISTICS(2)
Symbol Parameter
NEND(*)
ts TDR
Endurance
Data Retention
(*) Page Mode, VCC = 5 V, 25°C
Min
1,000,000
100
Units
Program/ Erase Cycles
Years
ar D.C. OPERATING CHARACTERISTICS
VCC = 1.8 V to 5.5 V, TA = -40°C to 85°C, unless otherwise specified.
P Symbol Parameter
Test Conditions
Min
Max
ICC
d ISB
e IL
u VIL
VIH
tin VOL1
VOL2
Supply Current
Standby Current
I/O Pin Leakage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Read or Write at 5 MHz
1
All I/O Pins at GND or VCC,
2
CS = VCC
Pin at GND or VCC
2
-0.5 VCC x 0.3
VCC x 0.7 VCC + 0.5
VCC > 2.5 V, IOL = 3.0 mA
0.4
VCC > 1.8 V, IOL = 1.0 mA
0.2
Units
mA
µA
µA
V
V
V
V
n PIN IMPEDANCE CHARACTERISTICS
o TA = 25°C, f = 1 MHz, VCC = 5 V
c Symbol
CIN(2)
is CIN(2)
DZWPL
Parameter
SDA I/O Pin Capacitance
Input Capacitance (other pins)
WP Input Low Impedance
Conditions
VIN = 0 V
VIN = 0 V
VIN < 0.5 V
Min
Max
Units
8
pF
6
pF
5
70
k
ILWPH
WP Input High Leakage
VIN > VCC x 0.7
2
µA
Note:
(1) The DC input voltage on any pin should not be lower than -0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin
may undershoot to no less than -1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
(2) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
and JEDEC test methods.
Doc. No. 1105, Rev. B
2
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice

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