935260219122 データシートの表示（PDF） - Philips Electronics

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935260219122

HITAG™ 2 Chip Module

Philips Electronics 

Specifications of the HT2 MOA3 S20

Rev. 1.1

2.6 Electrical Specifications

1997-08-19

Symbol

Absolute Maximum Ratings

Junction Temperature

Input Peak Current

Latch up Current

TJ

IINpeak

ESD

Operating Range

Temperature

TA

Input Read Only Threshold

Voltage 1) 3)

Input Threshold Voltage 1) 3)

Input Read Voltage 1) 3)

Input Write Voltage 1) 3)

Demodulator

Range 3)

VIN,RO

VIN,TH

VIN,RD

VIN,WR

VDEM_R

Modulator

R_MOD linear 3)

R_MOD nonlinear 3)

Resonance Capacitor 3)

RMODL

RMODNL

CResInit

min

-55°C

100 mA

2 kV

-40°C

2,0 Vp

189 pF

typ

max Comment / Conditions

140°C

30 mA

MIL-STD 883D, Method 3023

MIL-STD 883D, Method 3015.7,

Human Body

2,8 Vp

3,1 Vp

3,5 Vp

3,7 Vp

85°C

3,9 Vp

4,2 Vp

4,5 Vp

4,7 Vp

RThJunctionAmbient ≤ 30 K/W @

IINpeak = 30 mA

start modulation in read only

modes

start modulation after SETCC

read E²PROM

write E²PROM

4,0 Vp VINHigh - VINLow @ VINHigh = 5,0 Vp

T0=8 µs, TMOD=6*T0 2)

4,5 kΩ

3,6 kΩ

VINLow ≤ 2,0 Vp

VINLow ≥ 2,0 Vp

210 pF 231 pF VIN = 4,0 Vp

EEPROM

Write Current 4)

Read Current 4)

Data Retention

Write Endurance

IW

IR

Years

Cycles

10

100.000

25 µA

9 µA

VDD = 2,8 V

VDD = 2,8 V

@ 55°C

1)

VIN = VIN1 − VIN2 ... voltage between connection pads

2)

VINHigh

VINLow

TMOD

input voltage before modulation

input voltage during modulation

duration of the modulation

3)

@ Ri = 10 kΩ resistance of measurement equipment

4)

tested on silicon level

Ht2moa3.doc/HS

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