APM4947KC-TUL データシートの表示（PDF） - Anpec Electronics

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APM4947KC-TUL

Dual P-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM4947K

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol

VDSS

VGSS

ID*

IDM*

IS*

TJ

TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Diode Continuous Forward Current

Maximum Junction Temperature

Storage Temperature Range

PD*

Maximum Power Dissipation

RθJA* Thermal Resistance-Junction to Ambient

Note:

*Surface Mounted on 1in2 pad area, t ≤ 10sec.

VGS=-10V

TA=25°C

TA=100°C

Rating

-30

±20

-2.5

-10

-1.7

150

-55 to 150

2

0.8

62.5

Unit

V

A

A

°C

W

°C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

APM4947K

Min. Typ. Max.

Static Characteristics

BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA

-30

IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V

TJ=85°C

VGS(th) Gate Threshold Voltage

VDS=VGS, IDS=-250µA

-1

IGSS Gate Leakage Current

VGS=±20V, VDS=0V

RDS(ON) a Drain-Source On-state Resistance

VSDa Diode Forward Voltage

VGS=-10V, IDS=-2.5A

VGS=-4.5V, IDS=-2A

ISD=-1.7A, VGS=0V

Gate Charge Characteristics b

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

VDS=-15V, VGS=-10V,

IDS=-2.5A

-1

-30

-1.5 -2

±100

90 120

145 185

-0.8 -1.3

8

12

1.8

1.4

Unit

V

µA

V

nA

mΩ

V

nC

Copyright  ANPEC Electronics Corp.

2

Rev. B.1 - Mar., 2005

www.anpec.com.tw

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