CD9013J データシートの表示（PDF） - Continental Device India Limited
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CD9013J Datasheet PDF : 4 Pages
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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR TRANSISTOR
CD9013
TO-92
Plastic Package
EBC
General Purpose Audio Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Otherwise Specified)
DESCRIPTION
SYMBOL
VALUE
Collector Emitter Voltage
VCEO
30
Collector Base Voltage
VCBO
40
Emitter Base Voltage
VEBO
5
Collector Current Continuous
IC
500
Collector Power Dissipation
PC
625
Operating And Storage Junction
Temperature Range
Tj, Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
30
Collector Base Voltage
VCBO
IC=100µA, IE=0
40
Emitter Base Voltage
VEBO
IE=100µA, IC=0
5
Collector Cut off Current
ICBO
VCB=25V, IE = 0
Emitter Cut off Current
IEBO
VBE=3V, IC = 0
DC Current Gain
*hFE
VCE=1V, IC=50mA
64
hFE
VCE=1V, IC=500mA
40
Collector Emitter Saturation Voltage
VCE(sat)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
Base Emitter Saturation Voltage
VBE(sat)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
DYNAMIC CHARACTERISTICS
Output Capacitance
Transition Frequency
Noise Figure
*hFE CLASSIFICATION
Cob
VCB=10V, f=1MHz
fT
IC=50mA, VCE=10V, f=100MHz
200
NF
VCE =10V,IC=1mA, f=1KHz
D/E/F:64 - 135
G/H/I: 118 - 305
UNITS
V
V
V
mA
mW
ºC
MAX
100
100
465
UNITS
V
V
V
nA
nA
0.2
V
0.6
V
1.0
V
1.2
V
10
6.0
J: 278 - 465
pF
MHz
dB
CD9013Rev_1170603D
Continental Device India Limited
Data Sheet
Page 1 of 4
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