CLX34 データシートの表示（PDF） - Infineon Technologies

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CLX34

HiRel X-Band GaAs Power-MESFET

Infineon Technologies 

CLX34

Electrical Characteristics (at TA=25°C; unless otherwise specified)

Parameter

DC Characteristics

Drain-source saturation current

VDS = 2 V, VGS = 0 V

Gate threshold voltage

VDS = 3 V, ID = 60 mA

Drain current at pinch-off, low VDS

VDS = 3 V, VGS = -3.5 V

Gate current at pinch-off, low VDS

VDS = 3 V, VGS = -3.5 V

Drain current at pinch-off, high VDS

VDS = 9.5 V, VGS = -3.5 V

Gate current at pinch-off, high VDS

VDS = 9.5 V, VGS = -3.5 V

Transconductance

VDS = 3 V, ID = 600 mA

Thermal resistance

Junction to soldering point

VDS = 8 V, ID = 600 mA, Ts = +25°C

Symbol

min.

Values

Unit

typ. max.

IDss

900 1500 2000 mA

-VGth

1.2 2.2

3.2 V

IDp3

-

-

400 µA

-IGp3

-

-

120 µA

IDp9.5

-

-

3000 µA

-IGp9.5

-

-

1200 µA

gm

660 780 -

mS

Rth JS

-

16

-

K/W

Semiconductor Group

3 of 10

Draft D, September 99

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