CM1224-04MR(2010) データシートの表示（PDF） - ON Semiconductor

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CM1224-04MR
(Rev.:2010)

2- and 4-Channel Low Capacitance ESD Protection Arrays

ON Semiconductor 

CM1224

ELECTRICAL OPERATING CHARACTERISTICS(SEE NOTE 1)

SYMBOL PARAMETER

VP

Operating Supply Voltage (VP-VN)

IP

Operating Supply Current

VF

Diode Forward Voltage

Top Diode

Bottom Diode

ILEAK

Channel Leakage Current

CIN

Channel Input Capacitance

∆CIN

VESD

VCL

Channel Input Capacitance Matching

ESD Protection - Peak Discharge Voltage at

any channel input, in system

Contact discharge per IEC 61000-4-2

standard

Channel Clamp Voltage

Positive Transients

Negative Transients

CONDITIONS

(VP-VN)=3.3V

IF = 8mA; TA=25°C

TA=25°C; VP=5V, VN=0V

At 1 MHz, VP=3.3V, VN=0V,

VIN=1.65V

At 1 MHz, VP=3.3V, VN=0V,

VIN=1.65V

Notes 2 and 3; TA=25°C

TA=25°C, IPP = 1A,

tP = 8/20µS; Note 3

MIN TYP MAX UNITS

3.3 5.5

V

8.0 µA

0.60 0.80 0.95 V

0.60 0.80 0.95 V

±0.1 ±1.0 µA

0.60 0.70 0.80 pF

0.02

pF

±8

kV

V

+10.0

V

–1.8

V

RDYN Dynamic Resistance

Positive Transients

Negative Transients

IPP = 1A, tP = 8/20µS

Any I/O pin to Ground;

Note 3

1.08

Ω

0.66

Ω

Note 1: All parameters specified at TA = –40°C to +85°C unless otherwise noted.

Note 2: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VP = 3.3V, VN grounded.

Note 3: These measurements performed with no external capacitor on VP (VP floating).

Rev. 3 | Page 4 of 14 | www.onsemi.com

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