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CM1293(2010) データシートの表示(PDF) - ON Semiconductor

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CM1293
(Rev.:2010)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
CM1293 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
CM1293
ELECTRICAL OPERATING CHARACTERISTICS(SEE NOTE 1)
SYMBOL PARAMETER
CONDITIONS
VP
Operating Supply Voltage (VP-VN)
IP
Operating Supply Current
(VP-VN)=3.3V
V
Diode Forward Voltage
F
Top Diode
Bottom Diode
I = 8mA; T =25°C
F
A
I
Channel Leakage Current
LEAK
C
Channel Input Capacitance
IN
T =25°C; V =5V, V =0V
A
P
N
At 1 MHz, V =3.3V, V =0V, V =1.65V
P
N
IN
MIN TYP MAX UNITS
3.3 5.5
V
8.0 μA
0.60 0.80 0.95 V
0.60 0.80 0.95 V
±0.1 ±1.0 μA
1.0 1.5 pF
ΔCIN
Channel Input Capacitance
Matching
At 1 MHz, VP=3.3V, VN=0V, VIN=1.65V
0.02
pF
CMUTUAL
Mutual Capacitance between
At 1 MHz, VP=3.3V, VN=0V, VIN=1.65V
signal pin and adjacent signal pin
0.11
pF
V
ESD Protection
ESD
Peak Discharge Voltage at any
channel input, in system
Contact discharge per
Notes 3 and 4; TA=25°C
±8
kV
IEC 61000-4-2 standard
VCL
Channel Clamp Voltage
Positive Transients
Negative Transients
TA=25°C, IPP = 1A, tP = 8/20μs;
Notes 4
+8.8
V
-1.4
V
R
Dynamic Resistance
DYN
Positive Transients
Negative Transients
I = 1A, t = 8/20μs
PP
P
Any I/O pin to Ground; Note 4
0.7
Ω
0.4
Ω
Note 1: All parameters specified at TA = -40°C to +85°C unless otherwise noted.
Note 2: Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5KΩ, VP = 3.3V, VN grounded.
Note 3: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VP = 3.3V, VN grounded.
Note 4: These measurements performed with no external capacitor on VP (VP floating).
Rev. 3 | Page 4 of 10 | www.onsemi.com

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