CM1690-08DE データシートの表示（PDF） - ON Semiconductor

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CM1690-08DE

LCD and Camera EMI Filter Array

ON Semiconductor 

CM1690

ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE1)

SYMBOL

L

CTOTAL

C

VDIODE

ILEAK

VSIG

VESD

RDYN

PARAMETER

Channel Inductance

CONDITIONS

MIN TYP MAX UNITS

12

nH

Total Channel Capacitance

At 2.5VDC Reverse

25 33

40

pF

Bias, 1MHz, 30mVAC

Capacitance C1

At 2.5VDC Reverse

16.5

pF

Bias, 1MHz, 30mVAC

Standoff Voltage

IDIODE = 10µA

Diode Leakage Current (reverse bias)

VDIODE = +3.3V

Signal Clamp Voltage

Positive Clamp

Negative Clamp

ILOAD = 10mA

ILOAD = –10mA;

Note 3

In-system ESD Withstand Voltage

a) Human Body Model, MIL-STD-883, Method

3015

b) Contact Discharge per IEC 61000-4-2 Level 4

Notes 2 and 4

6.0

V

0.1 0.3

µA

5.6 6.8 9.0

V

–1.5 –0.8 –0.4

V

±30

kV

±15

kV

Dynamic Resistance

Positive

Negative

2.3

Ω

0.9

Ω

fC

RINSULATION

RCHANNEL

Roll-off Frequency at -6dB Attenuation

Z = SOURCE 50Ω, ZLOAD = 50Ω

Insulation Resistance

Channel Resistance

VDIODE=3.3V, Note 4

330

10

8

MHz

ΜΩ

Ω

Note 1: TA=25°C unless otherwise specified.

Note 2: ESD applied to input and output pins with respect to GND, one at a time.

Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin (i.e. if ESD is applied to pin A1 then

clamping voltage is measured at pin C1).

Note 4: Unused pins are left open.

Rev. 2 | Page 5 of 10 | www.onsemi.com

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