CNA1009H(2004) データシートの表示（PDF） - Panasonic Corporation
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CNA1009H Datasheet PDF : 4 Pages
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CNZ1021, CNZ1023, CNA1009H
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Input (Light Reverse CNZ1021 VR
3
V
emitting diode) voltage CNZ1023
3
CNA1009H
5
Forward current
IF
50
mA
Power dissipation *1
PD
75
mW
Output (Photo Collector-emitter voltage VCEO
30
V
transistor) (Base open)
Emitter-collector voltage VECO
5
V
(Base open)
Collector current
IC
20
mA
Collector power dissipation *2 PC
100
mW
Temperature Operating ambient temperature Topr −25 to +85 °C
Storage temperature
Tstg −40 to +100 °C
Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C.
*2: Output power derating ratio is 1.33 mW/°C at Ta ≥ 25°C.
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Input
Forward voltage
VF
characteristics Reverse current
IR
Output
Collector-emitter cutoff current ICEO
characteristics (Base open)
Transfer Collector current
IC
characteristics Collector-emitter saturation voltage VCE(sat)
Rise time *
tr
Fall time *
tf
IF = 20 mA
VR = 3 V
VCE = 10 V
VCC = 5 V, IF = 20 mA, RL = 100 Ω
IF = 40 mA, IC = 1 mA
VCC = 5 V, IC = 1 mA
RL = 100 Ω
1.25 1.40 V
10 µA
10 200 nA
0.5
15.0 mA
0.4 V
5
µs
5
µs
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3. *: Switching time measurement circuit
Sig. in
50 Ω
VCC
(Input pulse)
Sig. out (Output pulse)
RL
tr
tr : Rise time
90% tf : Fall time
10%
tf
2
SHG00017BED
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