CPV362M4F データシートの表示（PDF） - International Rectifier
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CPV362M4F Datasheet PDF : 10 Pages
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CPV362M4F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.72 ––– V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 1.41 1.7
IC = 4.8A
VGE = 15V
––– 1.66 ––– V IC = 8.8A
See Fig. 2, 5
––– 1.42 –––
IC = 4.8A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 ––– 6.0
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -11 ––– mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
2.9 5.0 ––– S VCE = 100V, IC = 4.8A
ICES
Zero Gate Voltage Collector Current ––– ––– 250 µA VGE = 0V, VCE = 600V
––– ––– 1700
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
Diode Forward Voltage Drop
––– 1.4 1.7 V IC = 8.0A
See Fig. 13
––– 1.3 1.6
IC = 8.0A, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
––– 30 45
––– 4.0 6.0
––– 13 20
––– 49 –––
––– 22 –––
––– 200 300
––– 214 320
––– 0.23 –––
––– 0.33 –––
––– 0.45 0.70
––– 48 –––
––– 25 –––
––– 435 –––
––– 364 –––
––– 0.93 –––
––– 340 –––
––– 63 –––
––– 5.9 –––
––– 37 55
––– 55 90
––– 3.5 50
––– 4.5 8.0
––– 65 138
––– 124 360
––– 240 –––
––– 210 –––
nC
ns
mJ
ns
mJ
pF
ns
A
nC
A/µs
IC = 4.8A
VCC = 400V
See Fig. 8
TJ = 25°C
IC = 4.8A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
diode reverse recovery
See Fig. 9, 10, 18
TJ = 150°C, See Fig. 10,11, 18
IC = 4.8A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
diode reverse recovery
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C
14
TJ = 25°C See Fig.
TJ = 125°C
15
IF = 8.0A
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C
16 di/dt = 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
VCC=80%(VCES), VGE=20V, L=10µH, Pulse width 5.0µs, single
RG= 50Ω, ( See fig. 19 )
shot.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
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