CRF24060 データシートの表示（PDF） - Cree, Inc
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CRF24060 Datasheet PDF : 10 Pages
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Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Drain-source Voltage
Gate to source Voltage
Storage Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Soldering Temperature
Symbol
VDSS
VGS
TSTG
TJ
RθJC
TS
Electrical Characteristics (TC = 25˚C)
Characteristics
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance
Case Operating Temperature
Screw Torque
RF Characteristics
Gain
Power Output at 1 dB Compression
Power Output at 3 dB Compression
Drain Efficiency1,2
Symbol
VGS(th)
VGS(Q)
IDSS
V(BR)DSS
gm
TC
T
GSS
P1dB
P3dB
η
Intermodulation Distortion
IMD3
Min.
-13
–
6.0
100
700
-30
–
10
50
-
40
–
Output Mismatch Stress
VSWR
10 : 1
Notes:
1 Drain Efficiency = POUT / PDC
2 Power Added Efficiency (PAE) = (POUT - PIN) / PDC
Typ.
-10
-7
7.5
–
800
–
–
13
60
80
45
-31
–
Rating
120
-20, +3
-55, +150
255
1.4
225
Units
Volts
Volts
˚C
˚C
˚C/W
˚C
Max.
–
–
9.0
–
–
125
80
–
–
–
–
–
–
Units
Conditions
VDC
VDC
A
VDC
mS
˚C
in-oz
VDS = 10 V, ID = 2.5 mA
VDS = 48 V, ID = 2000 mA
VDS = 10 V, VGS = 0 V
VGS = -18, ID = 50 mA
VDS = 48 V, ID = 2000 mA
Reference 440193 Rev 1
dB
VDD = 48 V, IDQ = 2000 mA,
f = 1500 MHz
W
VDD = 48 V, IDQ = 2000 mA,
f = 1500 MHz
W
VDD = 48 V, IDQ = 2000 mA,
f = 1500 MHz
%
VDD = 48 V, IDQ = 2000 mA,
f = 1500 MHz POUT = P1dB
VDD = 48 V, IDQ = 2000 mA,
dBc
f1 = 1000 MHz, f2 = 1000.1 MHz,
POUT = 50W PEP
No damage at all phase angles,
Y
VDD = 48 V, IDQ = 2000 mA,
f = 1000 MHz, POUT = 50W CW
Copyright © 2002-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks and Wireless by Cree is a trademark of Cree, Inc.
CRF24060 Rev 1.2
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
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