BUZ11_NR4941 データシートの表示（PDF） - Fairchild Semiconductor
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BUZ11_NR4941 Datasheet PDF : 7 Pages
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BUZ11
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
BUZ11
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current TC = 30oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50
50
30
120
±20
75
0.6
-55 to 150
E
V
V
A
A
V
W
W/oC
oC
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SYMBOL
TEST CONDITIONS
BVDSS ID = 250µA, VGS = 0V
VGS(TH)
IDSS
IGSS
rDS(ON)
VGS = VDS, ID = 1mA (Figure 9)
TJ = 25oC, VDS = 50V, VGS = 0V
TJ = 125oC, VDS = 50V, VGS = 0V
VGS = 20V, VDS = 0V
ID = 15A, VGS = 10V (Figure 8)
gfs
td(ON)
tr
VDS = 25V, ID = 15A (Figure 11)
VCC = 30V, ID ≈ 3A, VGS = 10V, RGS = 50Ω,
RL = 10Ω
td(OFF)
tf
CISS
VDS = 25V, VGS = 0V, f = 1MHz (Figure 10)
COSS
CRSS
RθJC
RθJA
MIN TYP MAX UNITS
50
-
-
V
2.1
3
4
V
-
20
250
µA
-
100 1000 µA
-
10
100
nA
-
0.03 0.04
Ω
4
8
-
S
-
30
45
ns
-
70 110
ns
-
180 230
ns
-
130 170
ns
-
1500 2000 pF
-
750 1100 pF
-
250 400
pF
≤ 1.67
oC/W
≤ 75
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Continuous Source to Drain Current
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD
ISDM
VSD
trr
QRR
TC = 25oC
TC = 25oC
TJ = 25oC, ISD = 60A, VGS = 0V
TJ = 25oC, ISD = 30A, dISD/dt = 100A/µs,
VR = 30V
-
-
30
-
-
120
-
1.7 2.6
-
200
-
-
0.25
-
NOTES:
2. Pulse Test: Pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
A
A
V
ns
µC
©2001 Fairchild Semiconductor Corporation
BUZ11 Rev. C0
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