2N2646 データシートの表示（PDF） - Comset Semiconductors

部品番号

コンポーネント説明

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2N2646

SILICON UNIJUNCTION TRANSISTORS

Comset Semiconductors 

2N2646

2N2647

Symbol

RBBO

η

VE(SAT)

IV

IP

Ratings

Interbase Resistance

VB1B2 = 3 V

Intrinsic stand-off ratio

VB1B2 = 10 V

2N2646

2N2647

Emitter Saturation Voltage

IE = 50 mA, VB1B2 = 10 V

Valley Current

VB1B2 = 20 V

2N2646

2N2647

Peak Current

VB1B2 = 25 V

2N2646

2N2647

2N2646 – 2N2647

Min

Max

4.7

9.1

kΩ

0.56

0.75

-

0.68

0.82

-

2.5

V

4

-

mA

8

-

-

5

-

2

µA

* VDRM or VRSM can be applied for all types on a continuous dc basis without incurring damage.

Information furnished is believed to be accurate and reliable. However, CS assumes no responsability

for the consequences of use of such information nor for errors that could appear.

Data are subject to change without notice.

COMSET SEMICONDUCTORS

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