CTA2N1P データシートの表示（PDF） - Diodes Incorporated.
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CTA2N1P Datasheet PDF : 6 Pages
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Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Symbol Min
V(BR)CBO
60
V(BR)CEO
40
V(BR)EBO 6.0
ICEX
⎯
IBL
⎯
20
40
hFE
80
100
40
VCE(SAT)
VBE(SAT)
⎯
0.75
⎯
Ccb
⎯
Ceb
⎯
hie
1.0
hre
0.1
hfe
40
hoe
1.0
fT
250
td
⎯
tr
⎯
ts
⎯
tf
⎯
Max
Unit
Test Condition
⎯
V IC = 100μA, IE = 0
⎯
V IC = 1.0mA, IB = 0
⎯
V IE = 100μA, IC = 0
100
nA VCE = 35V, VEB(OFF) = 0.4V
100
nA VCE = 35V, VEB(OFF) = 0.4V
⎯
⎯
⎯
300
⎯
0.40
0.75
0.95
1.2
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
⎯ IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
6.5
pF VCB = 5.0V, f = 1.0MHz, IE = 0
30
pF VEB = 0.5V, f = 1.0MHz, IC = 0
15
kΩ
8.0
x 10-4 VCE = 10V, IC = 1.0mA,
500
⎯ f = 1.0kHz
30
μS
⎯
MHz VCE = 10V, IC = 20mA,
f = 100MHz
15
ns VCC = 30V, IC = 150mA,
20
ns VBE(off) = 2.0V, IB1 = 15mA
225
ns VCC = 30V, IC = 150mA,
30
ns IB1 = IB2 = 15mA
Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Symbol Min Typ Max Unit
Test Condition
BVDSS -50 ⎯ ⎯ V VGS = 0V, ID = -250µA
⎯ ⎯ -15 µA VDS = -50V, VGS = 0V, TJ = 25°C
IDSS
⎯ ⎯ -60 µA VDS = -50V, VGS = 0V, TJ = 125°C
⎯ ⎯ -100 nA VDS = -25V, VGS = 0V, TJ = 25°C
IGSS
⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V
VGS(th) -0.8 ⎯ -2.0
RDS (ON) ⎯ ⎯ 10
gFS
.05 ⎯ ⎯
V VDS = VGS, ID = -1mA
Ω VGS = -5V, ID = 0.100A
S VDS = -25V, ID = 0.1A
Ciss
Coss
Crss
⎯ ⎯ 45 pF
⎯
⎯
25
pF
VDS = -25V, VGS = 0V
f = 1.0MHz
⎯ ⎯ 12 pF
tD(ON)
tD(OFF)
⎯ 10 ⎯
⎯ 18 ⎯
ns VDD = -30V, ID = -0.27A,
ns RGEN = 50Ω, VGS = -10V
DS30295 Rev. 7 - 2
2 of 6
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CTA2N1P
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