CTA2P1N-7(Rev_2-2) データシートの表示（PDF） - Diodes Incorporated.
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CTA2P1N-7 Datasheet PDF : 4 Pages
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CTA2P1N
COMPLEX TRANSISTOR ARRAY
Features
· Combines MMBT4403 type transistor with 2N7002
type MOSFET
· Small Surface Mount Package
· NPN/P-Channel Complement Available: CTA2N1P
Mechanical Data
· Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
· Case material - UL Flammability Rating
Classification 94V-0
· Terminal Connections: See Diagram
K
· Marking: A80
· Weight: 0.006 grams (approx.)
J
CQ1
GQ2
SQ2
Q1
A
A80
BC
H
DF
L
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
F
0.30 0.40
H
1.80 2.20
J
¾
0.10
M
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
All Dimensions in mm
Q2
EQ1
BQ1
DQ2
Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
Pd
RqJA
Tj, TSTG
Value
150
833
-55 to +150
Unit
mW
°C/W
°C
Maximum Ratings, Q1, MMBT4403 PNP Transistor Element @ TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Symbol
VCBO
VCEO
VEBO
IC
Value
-40
-40
-5.0
-600
Unit
V
V
V
mA
Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element @ TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage
Continuous
Pulsed
Drain Current (Note 1)
Continuous
Continuous @ 100°C
Pulsed
Symbol
VDSS
VDGR
VGSS
ID
Value
60
60
±20
±40
115
73
800
Units
V
V
V
mA
DS30296 Rev. 2 - 2
1 of 4
CTA2P1N
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