CXD2306Q データシートの表示（PDF） - Sony Semiconductor
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CXD2306Q Datasheet PDF : 13 Pages
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CXD2306Q
Electrical Characteristics
(FCLK=80 MHz, AVDD=DVDD=5 V, ROUT=200 Ω, VREF=2.0 V, RIR=3.3 kΩ, Ta=25 °C)
Item
Symbol Measurement conditions
Resolution
n
Conversion speed
FCLK
AVDD=DVDD=4.75 to 5.25 V
Ta=–20 to +85 °C
Integral non-linearity error EL
Differential non-linearity error ED
Endpoint
Precision guaranteed
VOC
output voltage range
Output full-scale voltage
VFS
Output full-scale current
IFS
Output offset voltage
VOS
When D0 to D9= “0000000000” input
Glitch energy
GE
ROUT=100 Ω, 1 Vp-p output
Differential gain
DG
Differential phase
DP
Supply current
IDD
CE=L
ISTB
CE=H
Analog input resistance
RIN
VREF
Input capacitance
CI
Output capacitance
Co
IO
Digital input voltage
VIH
AVDD=DVDD=4.75 to 5.25 V
VIL
Ta=–20 to +75 °C
Digital input current
IIH
AVDD=DVDD=4.75 to 5.25 V
IIL
Ta=–20 to +75 °C
SREF output voltage
VSR
Setup time
ts
Hold time
th
Propagation delay time
tPD
CE enable time ∗1
tE
CE=H→L
CE disable time ∗1
tD
CE=L→H
Min.
0
–2.0
–0.5
1.8
1.8
9.0
1
2.15
–5
1.0
5.0
1.0
Typ.
10
1.92
1.92
9.6
50
2.5
1.3
50
10
1
1
Max. Unit
bit
80 MSPS
2.0 LSB
0.5 LSB
2.0
V
2.0
V
10
mA
1
mV
pV•s
%
deg
30
mA
1
MΩ
9
pF
pF
V
0.85
5
µA
1.3
V
ns
ns
ns
2
ms
2
ms
∗1 When the external capacitor for the VG pin is 0.1 µF.
Electrical Characteristics Measurement Circuit
} Analog Input Resistance
Digital Input Current
Measurement Circuit
+5.25V
A
V
AVDD, DVDD
CXD2306Q
AVSS, DVSS
—5—
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