CXK5T81000ATN データシートの表示（PDF） - Sony Semiconductor

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CXK5T81000ATN

131072-word × 8-bit High Speed CMOS Static RAM

Sony Semiconductor 

CXK5T81000ATN/AYN -10LLX/12LLX

131072-word × 8-bit High Speed CMOS Static RAM Preliminary

For the availability of this product, please contact the sales office.

Description

The CXK5T81000ATN/AYN is a high speed

CMOS static RAM organized as 131072-words by

8-bits.

Special feature are low power consumption and

high speed.

The CXK5T81000ATN/AYN is a suitable RAM for

portable equipment with battery back up.

CXK5T81000ATN

32 pin TSOP (Plastic)

CXK5T81000AYN

32 pin TSOP (Plastic)

Features

• Extended operating temperature range:

–25 to +85°C

• Wide supply voltage range operation: 2.7 to 3.6V

• Fast access time:

(Access time)

3.0V operation -10LLX 100ns (Max.)

-12LLX 120ns (Max.)

3.3V operation -10LLX 85ns (Max.)

-12LLX 100ns (Max.)

• Low standby current:

28µA (Max.)

• Low data retention current: 24µA (Max.)

• Low power data retention: 2.0V (Min.)

• Package 8mm × 13.4mm 32 pin TSOP package

Function

131072-word × 8-bit static RAM

Structure

Silicon gate CMOS IC

Block Diagram

A10

A11

A9

A8

A13

A15

Buffer

A16

A14

A12

A7

A6

A5

A4

A3

Buffer

A2

A1

A0

OE

Buffer

WE

CE1

CE2

Row

Decoder

Memory

Matrix

1024 × 1024

VCC

GND

I/O Gate

Column

Decoder

I/O Buffer

I/O1 I/O8

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

–1–

PE96726-PS

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