DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

CY14B101NA(2011) データシートの表示(PDF) - Cypress Semiconductor

部品番号
コンポーネント説明
メーカー
CY14B101NA
(Rev.:2011)
Cypress
Cypress Semiconductor Cypress
CY14B101NA Datasheet PDF : 26 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
CY14B101LA
CY14B101NA
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Maximum accumulated storage time:
At 150 °C ambient temperature........................ 1000 h
At 85 °C ambient temperature..................... 20 Years
Ambient temperature with power applied –55 °C to + 150 °C
Supply voltage on VCC relative to VSS............–0.5 V to 4.1 V
voltage applied to outputs in High Z state
............................................................. –0.5 V to VCC + 0.5 V
Input voltage ........................................ –0.5 V to VCC + 0.5 V
Transient voltage (<20 ns) on
any pin to ground potential .................. –2.0 V to VCC + 2.0 V
Package power dissipation
capability (TA = 25 °C) .................................................. 1.0 W
Surface mount Pb soldering
temperature (3 Seconds).......................................... +260 °C
DC output current (1 output at a time, 1s duration) ..... 15 mA
Static discharge voltage.......................................... > 2001 V
(per MIL-STD-883, Method 3015)
Latch up current..................................................... > 200 mA
Operating Range
Range
Industrial
Ambient Temperature
–40 °C to +85 °C
VCC
2.7 V to 3.6 V
DC Electrical Characteristics
Over the Operating Range (VCC = 2.7 V to 3.6 V)
Parameter
Description
Test Conditions
Min Typ[13] Max Unit
VCC
Power supply voltage
2.7
3.0
3.6
V
ICC1
Average VCC current tRC = 20 ns
tRC = 25 ns
tRC = 45 ns
Values obtained without output loads (IOUT = 0 mA)
70 mA
70 mA
52 mA
ICC2
Average VCC current All inputs don’t care, VCC = Max
during STORE
Average current for duration tSTORE
10 mA
ICC3
Average VCC current at All inputs cycling at CMOS levels.
tRC= 200 ns,
Values obtained without output loads (IOUT = 0 mA)
VCC (Typ), 25 °C
35
mA
ICC4
Average VCAP current All inputs don’t care. Average current for duration tSTORE
5
mA
during AutoStore cycle
ISB
VCC standby current CE > (VCC – 0.2 V). VIN < 0.2 V or > (VCC – 0.2 V).
5
mA
Standby current level after nonvolatile cycle is complete.
Inputs are static. f = 0 MHz
IIX[14]
Input leakage current VCC = Max, VSS < VIN < VCC
(except HSB)
–1
+1 µA
Input leakage current VCC = Max, VSS < VIN < VCC
(for HSB)
–100
+1 µA
IOZ
VIH
VIL
VOH
VOL
VCAP
Off-state output
leakage current
Input HIGH voltage
Input LOW voltage
Output HIGH voltage
Output LOW voltage
Storage capacitor
VCC = Max, VSS < VOUT < VCC, CE or OE > VIH or
BHE/BLE > VIH or WE < VIL
IOUT = –2 mA
IOUT = 4 mA
Between VCAP pin and VSS, 5 V rated
–1
+1 µA
2.0
– VCC+0.5 V
VSS–0.5 –
0.8
V
2.4
V
0.4
V
61
68
180 µF
Notes
13. Typical values are at 25 °C, VCC= VCC (Typ). Not 100% tested.
14. The HSB pin has IOUT = -2 uA for VOH of 2.4 V when both active high and low drivers are disabled. When they are enabled standard VOH and VOL are valid. This
parameter is characterized but not tested.
Document #: 001-42879 Rev. *K
Page 9 of 26
[+] Feedback

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]