CY14B101LA データシートの表示（PDF） - Cypress Semiconductor
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CY14B101LA Datasheet PDF : 24 Pages
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PRELIMINARY
CY14B101LA, CY14B101NA
Table 2. Mode Selection (continued)
CE
WE
OE, BHE, BLE[3]
A15 - A0[9]
Mode
I/O
Power
L
H
L
0x4E38
Read SRAM
Output Data
Active[10]
0xB1C7
Read SRAM
Output Data
0x83E0
Read SRAM
Output Data
0x7C1F
Read SRAM
Output Data
0x703F
Read SRAM
Output Data
0x4B46
AutoStore Enable Output Data
L
H
L
0x4E38
Read SRAM
Output Data
Active ICC2[10]
0xB1C7
Read SRAM
Output Data
0x83E0
Read SRAM
Output Data
0x7C1F
Read SRAM
Output Data
0x703F
Read SRAM
Output Data
0x8FC0
Nonvolatile
Output High Z
STORE
L
H
L
0x4E38
Read SRAM
Output Data
Active[10]
0xB1C7
Read SRAM
Output Data
0x83E0
Read SRAM
Output Data
0x7C1F
Read SRAM
Output Data
0x703F
Read SRAM
Output Data
0x4C63
Nonvolatile
Output High Z
Recall
Preventing AutoStore
The AutoStore function is disabled by initiating an AutoStore
disable sequence. A sequence of read operations is performed
in a manner similar to the Software STORE initiation. To initiate
the AutoStore disable sequence, the following sequence of CE
controlled read operations must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x8B45 AutoStore Disable
The AutoStore is reenabled by initiating an AutoStore enable
sequence. A sequence of read operations is performed in a
manner similar to the Software RECALL initiation. To initiate the
AutoStore enable sequence, the following sequence of CE
controlled read operations must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x4B46 AutoStore Enable
If the AutoStore function is disabled or reenabled, a manual
STORE operation (Hardware or Software) must be issued to
save the AutoStore state through subsequent power down
cycles. The part comes from the factory with AutoStore enabled.
Data Protection
The CY14B101LA/CY14B101NA protects data from corruption
during low voltage conditions by inhibiting all externally initiated
STORE and write operations. The low voltage condition is
detected when VCC is less than VSWITCH. If the
CY14B101LA/CY14B101NA is in a write mode (both CE and WE
are LOW) at power up, after a RECALL or STORE, the write is
inhibited until the SRAM is enabled after tLZHSB (HSB to output
active). This protects against inadvertent writes during power up
or brown out conditions.
Noise Considerations
Refer to CY application note AN1064.
Document #: 001-42879 Rev. *C
Page 6 of 24
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