DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

CY14B104NA-BA25IT データシートの表示(PDF) - Cypress Semiconductor

部品番号
コンポーネント説明
メーカー
CY14B104NA-BA25IT
Cypress
Cypress Semiconductor Cypress
CY14B104NA-BA25IT Datasheet PDF : 26 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
CY14B104LA, CY14B104NA
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................–65 C to +150 C
Maximum accumulated storage time
At 150 C ambient temperature ....................... 1000 h
At 85 C ambient temperature ......................20 Years
Ambient temperature with
power applied ...........................................–55 C to +150 C
Supply voltage on VCC relative to VSS .......... –0.5 V to 4.1 V
Voltage applied to outputs
in high Z state ..................................... –0.5 V to VCC + 0.5 V
Input voltage ........................................ –0.5 V to Vcc + 0.5 V
Transient voltage (< 20 ns) on
any pin to ground potential ................. –2.0 V to VCC + 2.0 V
Package power dissipation
capability (TA = 25 °C) ..................................................1.0 W
Surface mount Pb soldering
temperature (3 Seconds) .........................................+260 C
DC output current (1 output at a time, 1s duration) .....15 mA
Static discharge voltage
(per MIL-STD-883, Method 3015) .......................... > 2001 V
Latch up current .................................................... > 200 mA
Operating Range
Range
Industrial
Ambient Temperature
–40 C to +85 C
VCC
2.7 V to 3.6 V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
VCC
Power supply
ICC1
Average VCC current
ICC2
Average VCC current during
STORE
ICC3
Average VCC current at
tRC= 200 ns, VCC(Typ), 25 °C
ICC4
Average VCAP current during
AutoStore cycle
ISB
VCC standby current
IIX[16]
IOZ
VIH
VIL
VOH
VOL
VCAP[17]
Input leakage current (except
HSB)
Input leakage current (for HSB)
Off-state output leakage current
Input HIGH voltage
Input LOW voltage
Output HIGH voltage
Output LOW voltage
Storage capacitor
Test Conditions
tRC = 20 ns
tRC = 25 ns
tRC = 45 ns
Values obtained without output loads
(IOUT = 0 mA)
All inputs don’t care, VCC = Max
Average current for duration tSTORE
All inputs cycling at CMOS levels.
Values obtained without output loads
(IOUT = 0 mA).
All inputs don’t care. Average current for
duration tSTORE
CE > (VCC – 0.2 V).
VIN < 0.2 V or > (VCC – 0.2 V).
Standby current level after non-volatile
cycle is complete.
Inputs are static. f = 0 MHz.
VCC = Max, VSS < VIN < VCC
VCC = Max, VSS < VIN < VCC
VCC = Max, VSS < VOUT < VCC,
CE or OE > VIH or
BHE/BLE > VIH or WE < VIL
IOUT = –2 mA
IOUT = 4 mA
Between VCAP pin and VSS
Min
2.7
–1
–100
–1
2.0
Vss – 0.5
2.4
61
Typ [15]
3.0
Max Unit
3.6
V
70
mA
70
mA
52
mA
10
mA
35
mA
5
mA
5
mA
+1
A
+1
A
+1
A
VCC + 0.5 V
0.8
V
V
0.4
V
68
180
F
Notes
15. Typical values are at 25 °C, VCC = VCC(Typ). Not 100% tested.
16.
The HSB pin
parameter is
chhaasrIaOcUteTr=ize–d2
µA
but
fnoortVteOsHteodf .2.4
V
when
both
active
HIGH
and
LOW
drivers
are
disabled.
When
they
are
enabled
standard
VOH
and
VOL
are
valid.
This
17.
MoitniisnVaVClwCAPAaPyissvcarheluacerogmgeudmateroannadtemedeinstoimthuuasmtethvaeocrlteaapgisaecaditosuurrifnwfigcitihaeinnPtotchwheeasrr-gpUeepcaiRfvieaEdiClamAbLlienLtaconycdcolmemsapoxletlhtimeaitatsas.nuRicmecfmeesresadfupialptAelicupatootiwSonteornr-edootoewpAnerNcay4tic3ol5en9.c3ManfaoxcroVmmCopArlePetvdeaealtuaseilusgcoucnaersVasnCfutAelPeAosupttohtiSoanttosthr.ee.
capacitor
Therefore
Document Number: 001-49918 Rev. *L
Page 8 of 26

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]