SDM8958 データシートの表示（PDF） - Samhop Mircroelectronics

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SDM8958

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

Samhop Mircroelectronics 

S DM8958

P-Channel ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted)

P a ra meter

S ymbol Condition

Min Typ C Max Unit

OFF CHARACTERISTICS

Drain-S ource Breakdown Voltage

BVDSS VGS =0V, ID =-250uA -30

Zero Gate Voltage Drain C urrent

IDSS

VDS =-24V, VGS =0V

Gate-Body Leakage

ON CHARACTERISTICS b

IGSS

VGS = 20V, VDS =0V

Gate Threshold Voltage

V G S (th)

VDS =VGS, ID = -250uA -1

Drain-S ource On-S tate R esistance

R DS(ON)

VGS =-10V, ID= -4.5A

VGS =-5V , ID =-4A

On-S tate Drain Current

ID(ON)

Forward Transconductance

gFS

DYNAMIC CHARACTERISTICS c

VDS = -5V, VGS = -10V -20

VDS =-5V, ID = - 4.5A

Input Capacitance

C IS S

Output Capacitance

COSS

R everse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS c

VDS =-15V, VGS = 0V

f =1.0MHZ

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

Fall Time

tD(ON)

VD = -15V,

tr

RL = 15 W

ID = -1A,

tD(O F F )

VGEN = -10V,

tf

RGEN = 10 W

Total Gate C harge

V DS =-15V, ID=-5. 3A, V G S =-10V

Qg

V DS =-15V, ID=-5. 3A, V G S =-4. 5V

Gate-S ource Charge

Gate-Drain C harge

Qgs

VDS =-15V, ID = - 5.3A,

Qgd

VGS =-10V

V

-1 uA

100 nA

-1.7 -3 V

52 m ohm

90 m ohm

A

10

S

860

PF

470

PF

180

PF

9 20 ns

10 40 ns

37 90 ns

23 110 ns

15 20 nC

8.7 10.5 nC

3

nC

4

nC

3

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