SDM8958 データシートの表示（PDF） - Samhop Mircroelectronics

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SDM8958

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

Samhop Mircroelectronics 

S DM8958

E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)

P a ra meter

S ymbol Condition

Min TypC Max Unit

DRAIN-SOURCE DIODE CHARACTERISTICS b

Diode Forward Voltage

VSD

VGS = 0V, Is =1.7A N-C h

VGS = 0V, Is =-1.7A P -C h

0.77 1.2

-0.82 -1.2

V

Notes

a.S urface Mounted on FR 4 Board, t＜10sec.

b.Pulse Test:Pulse Width＜300us, Duty Cycle ＜2%.

c.Guaranteed by design, not subject to production testing.

N-C hannel

25

V GS =10,9,8,7,6,5,4V

20

15

10

V GS =3V

5

0

0 0.5 1

1.5 2

2.5 3

V DS , Drain-to-S ource Voltage (V )

F igure 1. Output C haracteris tics

25

20

25 C

15

10

T j=125 C

5

-55 C

0

0.0 1.0 2.0 3.0 4.0 5.0 6.0

V G S , G ate-to-S ource Voltage (V )

F igure 2. Trans fer C haracteris tics

1200

1000

800

600

C is s

400

C oss

200

C rss

0

0 5 10 15 20 25 30

V DS , Drain-to S ource Voltage (V )

F igure 3. C apacitance

0.030

0.025

V GS =10V

0.020

0.015

0.010

0.005

T j=125 C

25 C

-55 C

0

0

5

10

15

20

ID, Drain C urrent(A)

F igure 4. On-R es is tance Variation with

Drain C urrent and Temperature

4

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