M36DR432AD85ZA6T データシートの表示（PDF） - STMicroelectronics

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M36DR432AD85ZA6T

32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36DR432AD, M36DR432BD

Table 17. SRAM DC Characteristics

(TA = –40 to 85°C; VDDF = VDDS = 1.65V to 2.2V)

Symbol

Parameter

Test Condition

Min Typ

Max

Unit

IOZ

Output Leakage

Current

0V ≤ VOUT ≤ VDDS, output disabled

-1

+1

+1

µA

IIX

Input Load Current

0V ≤ VIN ≤ VDDS

-1

±1

+1

µA

IDDS

VDD Standby

Current

ES ≥ VDDS – 0.2V, VIN ≥ VDDS – 0.2V

or VIN ≤ 0.2V, f=0

VDDS = 2.2V

1

10

µA

IOUT = 0 mA, f = fMAX = 1/tRC, CMOS levels

IDD

Supply Current

VDDS = 2.2V

IOUT = 0 mA, f = 0Hz

CMOS levels

4

7

mA

1

5

mA

VIL

Input Low Voltage

VDDS = 1.65V

–0.5

0.4

V

VIH

Input High Voltage

VDDS = 2.2V

1.4

VDDS +0.2V V

VOL Output Low Voltage

VDDS = 1.65V

IOL = 0.1µA

0.2

V

VOH Output High Voltage

VDDS = 1.65V

IOH = –0.1µA

1.4

V

Note: 1. IDDES and IDDWS are specified with device deselected. If device is read while in erase suspend, current draw is sum of IDDES

and IDDR. If the device is read while in program suspend, current draw is the sum of IDDWS and IDDR.

2. VIN = VIL or VIH

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