M36DR432AD10ZA6 データシートの表示（PDF） - STMicroelectronics

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M36DR432AD10ZA6

32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36DR432AD, M36DR432BD

SUMMARY DESCRIPTION

The M36DR432AD/BD is a low-voltage Multiple

Memory Product which combines two memory de-

vices: a 32 Mbit (2Mbit x16) non-volatile Flash

memory and a 4 Mbit SRAM.

The memory is available in a Stacked LFBGA66

12x8mm - 8x8 active ball array, 0.8mm pitch pack-

age and supplied with all the bits erased (set to

‘1’).

Figure 2. Logic Diagram

VDDF VPPF VDDS

21

A0-A20

16

DQ0-DQ15

WF

EF

GF

RPF

WPF

E1S

E2S

GS

WS

UBS

M36DR432AD

M36DR432BD

LBS

VSSF VSSS

AI07309b

Table 1. Signal Names

A0-A17

Address Inputs

A18-A20

Address Inputs for Flash Chip only

DQ0-DQ15 Data Input/Outputs, Command Inputs

VDDF

Flash Power Supply

VPPF

Flash Optional Supply Voltage for Fast

Program & Erase

VSSF

Flash Ground

VDDS

SRAM Power Supply

VSSS

SRAM Ground

NC

Not Connected Internally

Flash control functions

EF

Chip Enable

GF

Output Enable

WF

Write Enable

RPF

Reset/Power-Down

WPF

Write Protect input

SRAM control functions

E1S

Chip Enable

E2S

Chip Enable

GS

Output Enable

WS

Write Enable

UBS

Upper Byte Enable

LBS

Lower Byte Enable

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