M59MR032CZC データシートの表示（PDF） - STMicroelectronics
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M59MR032CZC Datasheet PDF : 49 Pages
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M59MR032C, M59MR032D
Table 16. Protection States (1)
Current State (2)
(WP, ADQ1,
ADQ0)
Program/Erase
Allowed
Protect
Next State After Event (3)
Unprotect
Lock
WP transition
100
yes
101
100
111
000
101
no
101
100
111
001
110
yes
111
110
111
011
111
no
111
110
111
011
000
yes
001
000
011
100
001
no
001
000
011
101
011
no
011
011
011
111 or 110 (4)
Note: 1. All blocks are protected at power-up, so the default configuration is 001 or 101 according to WP status.
2. Current state and Next state gives the protection status of a block. The protection status is defined by the write protect pin and by
ADQ1 (= 1 for a locked block) and ADQ0 (= 1 for a protected block) as read in the Autoselect instruction with A1 = VIH and A0 = VIL.
3. Next state is the protection status of a block after a Protect or Unprotect or Lock command has been issued or after WP has changed
its logic value.
4. A WP transition to VIH on a locked block will restore the previous ADQ0 value, giving a 111 or 110.
Program in Bypass Mode (PGBY) Instruc-
tion. This instruction uses two write cycles. The
Program command A0h is written to any Address
on the first cycle and the second write cycle latch-
es the Address on the rising edge of L and the
Data to be written on the rising edge of W and
starts the P/E.C. Read operations within the same
bank output the Status Register bits after the pro-
gramming has started. Memory programming is
made only by writing ’0’ in place of ’1’. The content
of the memory cell is not changed if the user write
’1’ in place of ’0’ and no error occurs. Status bits
ADQ6 and ADQ7 determine if programming is on-
going and ADQ5 allows verification of any possible
error.
Program (PG) Instruction. This instruction uses
four write cycles. The Program command A0h is
written to address 555h on the third cycle after two
Coded Cycles. A fourth write operation latches the
Address and the Data to be written and starts the
P/E.C. Read operations within the same bank out-
put the Status Register bits after the programming
has started. Memory programming is made only
by writing ’0’ in place of ’1’. The content of the
memory cell is not changed if the user write ’1’ in
place of ’0’ and no error occurs. Status bits ADQ6
and ADQ7 determine if programming is on-going
and ADQ5 allows verification of any possible error.
Programming at an address not in blocks being
erased is also possible during erase suspend.
Double Word Program (DPG) Instruction. This
feature is offered to improve the programming
throughput, writing a page of two adjacent words
in parallel. High voltage (11.4V to 12.6V) on VPP
pin is required. This instruction uses five write cy-
cles. The double word program command 40h is
written to address 555h on the third cycle after two
Coded Cycles. A fourth write cycle latches the ad-
dress and data to be written to the first location. A
fifth write cycle latches the new data to be written
to the second location and starts the P/E.C.. Note
that the two locations must have the same address
except for the address bit A0. The Double Word
Program can be executed in Bypass mode (DPG-
BY) to skip the two coded cycles at the beginning
of each command.
Block Protect (BP), Block Unprotect (BU),
Block Lock (BL) Instructions. All blocks are
protected and unlocked at power-up. Each block
of the array has two levels of protection against
program or erase operation. The first level is set by
the Block Protect instruction; a protected block
cannot be programmed or erased until a Block Un-
protect instruction is given for that block. A second
level of protection is set by the Block Lock instruc-
tion, and requires the use of the WP pin, according
to the following scheme:
– when WP is at VIH, the Lock status is overridden
and all blocks can be protected or unprotected;
– when WP is at VIL, Lock status is enabled; the
locked blocks are protected, regardless of their
previous protect state, and protection status
cannot be changed. Blocks that are not locked
can still change their protection status, and pro-
gram or erase accordingly;
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