M59MR032C120ZC6T データシートの表示（PDF） - STMicroelectronics

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M59MR032C120ZC6T

32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory

STMicroelectronics 

M59MR032C, M59MR032D

– the lock status is cleared for all blocks at power-

up or pulling RP at VIL for at least tPLPH. The

protection and lock status can be monitored for

each block using the Autoselect (AS) instruc-

tion. Protected blocks will output a ‘1’ on ADQ0

and locked blocks will output a ‘1’ on ADQ1.

After a pulse of RP of at least tPLPH all blocks are

protected and unlocked.

Refer to Table 16 for a list of the protection states.

Block Erase (BE) Instruction. This instruction

uses a minimum of six write cycles. The Erase

Set-up command 80h is written to address 555h

on third cycle after the two Coded cycles. The

Block Erase Confirm command 30h is similarly

written on the sixth cycle after another two Coded

cycles and an address within the block to be

erased is given and latched into the memory.

Additional block Erase Confirm commands and

block addresses can be written subsequently to

erase other blocks in parallel, without further Cod-

ed cycles. All blocks must belong to the same

bank of memory; if a new block belonging to the

other bank is given, the operation is aborted. The

erase will start after an erase timeout period of

100µs. Thus, additional Erase Confirm commands

for other blocks must be given within this delay.

The input of a new Erase Confirm command will

restart the timeout period. The status of the inter-

nal timer can be monitored through the level of

ADQ3, if ADQ3 is '0' the Block Erase Command

has been given and the timeout is running, if

ADQ3 is '1', the timeout has expired and the P/

E.C. is erasing the Block(s). If the second com-

mand given is not an erase confirm or if the Coded

cycles are wrong, the instruction aborts, and the

device is reset to Read Array. It is not necessary

to program the block with 00h as the P/E.C. will do

this automatically before erasing to FFh. Read op-

erations within the same bank, after the sixth rising

edge of W or E, output the status register bits.

During the execution of the erase by the P/E.C.,

the memory accepts only the Erase Suspend ES

instruction; the Read/Reset RD instruction is ac-

cepted during the 100µs time-out period. Data

Polling bit ADQ7 returns '0' while the erasure is in

progress and '1' when it has completed. The Tog-

gle bit ADQ6 toggles during the erase operation,

and stops when erase is completed.

After completion the Status Register bit ADQ5 re-

turns '1' if there has been an erase failure. In such

a situation, the Toggle bit ADQ2 can be used to

determine which block is not correctly erased. In

the case of erase failure, a Read/Reset RD in-

struction is necessary in order to reset the P/E.C.

Bank Erase (BKE) Instruction. This instruction

uses six write cycles and is used to erase all the

blocks belonging to the selected bank. The Erase

Set-up command 80h is written to address 555h

on the third cycle after the two Coded cycles. The

Bank Erase Confirm command 10h is similarly

written on the sixth cycle after another two Coded

cycles at an address within the selected bank. If

the second command given is not an erase con-

firm or if the Coded cycles are wrong, the instruc-

tion aborts and the device is reset to Read Array.

It is not necessary to program the array with 00h

first as the P/E.C. will automatically do this before

erasing it to FFh. Read operations within the same

bank after the sixth rising edge of W or E output

the Status Register bits. During the execution of

the erase by the P/E.C., Data Polling bit ADQ7 re-

turns '0', then '1' on completion. The Toggle bit

ADQ6 toggles during erase operation and stops

when erase is completed. After completion the

Status Register bit ADQ5 returns '1' if there has

been an Erase Failure.

Erase Suspend (ES) Instruction. In a dual bank

memory the Erase Suspend instruction is used to

read data within the bank where erase is in

progress. It is also possible to program data in

blocks not being erased.

The Erase Suspend instruction consists of writing

the command B0h without any specific address.

No Coded Cycles are required. Erase suspend is

accepted only during the Block Erase instruction

execution. The Toggle bit ADQ6 stops toggling

when the P/E.C. is suspended within 15µs after

the Erase Suspend (ES) command has been writ-

ten. The device will then automatically be set to

Read Memory Array mode. When erase is sus-

pended, a Read from blocks being erased will out-

put ADQ2 toggling and ADQ6 at '1'. A Read from

a block not being erased returns valid data. During

suspension the memory will respond only to the

Erase Resume ER and the Program PG instruc-

tions. A Program operation can be initiated during

erase suspend in one of the blocks not being

erased. It will result in ADQ6 toggling when the

data is being programmed.

Erase Resume (ER) Instruction. If an Erase

Suspend instruction was previously executed, the

erase operation may be resumed by giving the

command 30h, at an address within the bank be-

ing erased and without any Coded Cycle.

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